Infineon BSZ100N03LSG: High-Efficiency 30V Logic Level MOSFET for Power Management Applications

The demand for higher efficiency and compact power management solutions continues to grow across various electronic applications, from consumer gadgets to industrial systems. Addressing this need, the Infineon BSZ100N03LSG stands out as a high-performance logic level N-channel MOSFET engineered to deliver superior power efficiency and thermal performance in a compact package.

A key feature of the BSZ100N03LSG is its low threshold voltage, which allows it to be driven directly from logic-level signals (as low as 2.5V). This capability eliminates the need for additional level-shifting circuitry, simplifying design, reducing component count, and lowering overall system cost. With a drain-source voltage (VDS) rating of 30V and a continuous drain current (ID) of up to 100A, this MOSFET is well-suited for a wide range of power switching tasks, including DC-DC converters, motor control circuits, and load switching applications.

The device is built using Infineon’s advanced OptiMOS™ technology, which ensures extremely low on-state resistance (RDS(on)) of just 1.0 mΩ at 10V gate drive. This ultra-low resistance minimizes conduction losses, leading to higher efficiency and reduced heat generation. Such performance is critical in space-constrained applications where thermal management is challenging. Additionally, the MOSFET’s low gate charge (QG) enhances switching performance, making it ideal for high-frequency power converters that require fast switching transitions and minimal power loss.

Housed in a SuperSO8 package, the BSZ100N03LSG offers an excellent balance between power density and thermal efficiency. The package’s low thermal resistance helps dissipate heat effectively, supporting sustained operation under high-load conditions. This combination of electrical and thermal characteristics makes the component a reliable choice for modern power systems demanding both high current handling and energy efficiency.

Designers will also appreciate the device’s robustness and reliability, featuring strong avalanche ruggedness and a body diode with good reverse recovery characteristics. These traits contribute to system durability, especially in environments where voltage spikes or inductive loads are present.

ICGOOODFIND:

The Infineon BSZ100N03LSG is a highly efficient 30V logic level MOSFET that excels in power management applications. Its ultra-low RDS(on), high current capability, and compatibility with low-voltage control signals make it an optimal solution for improving efficiency and power density in DC-DC converters, motor drives, and battery management systems.

Keywords:

Logic Level MOSFET

Power Management

Low RDS(on)

DC-DC Converters

OptiMOS Technology