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Innoscience: Leading Innovator in Wide Bandgap Semiconductors

Innoscience is a global semiconductor company specializing in wide bandgap (WBG) technologies, with a focus on gallium nitride (GaN) and silicon carbide (SiC) devices. Founded to drive advancements in energy efficiency, the company delivers high-performance semiconductors that power next-generation electronics across automotive, consumer, and industrial sectors.

Core Technologies & Products

Gallium Nitride (GaN) Solutions

Silicon Carbide (SiC) Devices

Innoscience’s SiC MOSFETs and diodes excel in high-voltage, high-temperature applications, including:


Integrated Modules

The company integrates GaN and SiC chips into compact modules, simplifying design for manufacturers in consumer electronics, automotive, and renewable energy industries.

Market Focus & Impact

Innoscience targets key growth areas driven by electrification and energy efficiency:


Innovation & Manufacturing

With R&D centers and production facilities in Asia and Europe, Innoscience emphasizes vertical integration—controlling design, wafer fabrication, and packaging to ensure quality and scalability. The company invests in advanced manufacturing processes to lower costs and expand access to WBG technologies.

Global Partnerships

Innoscience collaborates with automakers, electronics brands, and energy companies to co-develop tailored solutions, fostering adoption of GaN and SiC across industries.


Keywords: Innoscience, GaN semiconductors, SiC devices, wide bandgap technology, EV charging semiconductors, GaN-on-Si, power semiconductor modules, Innoscience innovations.


Innoscience continues to push the boundaries of WBG semiconductors, enabling more sustainable, efficient, and compact electronic systems worldwide.


Semiconductor Technology

BOM RFQ

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ADA4096-4ACPZ-R7: A 36V, Precision, Quad-Channel Operational Amplifier for Robust Industrial Signal Conditioning

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HMC787LC3BTR: A 6 W GaAs pHEMT Power Amplifier for 24 to 34 GHz Millimeter-Wave Applications

HMC787LC3BTR: A 6 W GaAs pHEMT

**HMC787LC3BTR: A 6 W GaAs pHEMT Power Amplifier for 24 to 3

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ADG1436YCPZ-REEL7: 4 Ω Quad SPST CMOS Switch for Precision Signal Routing

ADG1436YCPZ-REEL7: 4 Ω Quad SP

**ADG1436YCPZ-REEL7: The 4 Ω Quad SPST CMOS Switch for High-

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The ADuM241E1BRIZ: A Quad-Channel Digital Isolator for Robust Industrial Communications

The ADuM241E1BRIZ: A Quad-Chan

**The ADuM241E1BRIZ: A Quad-Channel Digital Isolator for Rob

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HMC313: A Comprehensive Overview of the GaAs pHEMT MMIC Amplifier

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**HMC313: A Comprehensive Overview of the GaAs pHEMT MMIC Am

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Innoscience GaN Power Devices on ICGOODFIND