Infineon 2N08L07: High-Performance N-Channel Power MOSFET

The Infineon 2N08L07 is an N-Channel power MOSFET engineered to deliver exceptional efficiency and reliability in a wide range of power switching applications. Designed using advanced semiconductor technology, this component stands out for its low on-state resistance (RDS(on)) and high current handling capability, making it an ideal choice for high-performance systems where power loss and thermal management are critical.

With a maximum drain-source voltage (VDS) of 80V and a continuous drain current (ID) of up to 70A, the 2N08L07 is optimized for use in demanding environments such as industrial motor drives, switch-mode power supplies (SMPS), and automotive applications. Its low gate charge (QG) and fast switching characteristics minimize switching losses, enabling higher operating frequencies and improved overall system efficiency. The device is also housed in a TO-leadless (TOLL) package, which offers superior thermal performance and a compact footprint, facilitating better power density in modern electronic designs.

Additionally, the MOSFET features enhanced avalanche ruggedness and a body diode with good reverse recovery behavior, ensuring durability under stressful conditions like inductive load switching. These attributes make the Infineon 2N08L07 a robust solution for designers seeking to optimize performance while maintaining system stability.

ICGOOODFIND:

The Infineon 2N08L07 combines low RDS(on), high current capacity, and excellent thermal properties in a compact package, providing an efficient and reliable option for advanced power management solutions.

Keywords:

Power MOSFET, Low RDS(on), High Current Switching, Thermal Performance, TOLL Package