**HMC787LC3BTR: A 6 W GaAs pHEMT Power Amplifier for 24 to 34 GHz Millimeter-Wave Applications**
The rapid expansion of millimeter-wave (mmWave) applications, from 5G infrastructure and satellite communications to advanced radar systems, demands high-performance power amplifiers (PAs) that can operate efficiently within challenging frequency bands. Addressing this need, the **HMC787LC3BTR** stands out as a **monolithic microwave integrated circuit (MMIC)** power amplifier that delivers exceptional power and linearity across the **24 to 34 GHz** spectrum.
Fabricated on a **high-performance GaAs (Gallium Arsenide) pseudomorphic High Electron Mobility Transistor (pHEMT)** process, this amplifier is engineered to provide a remarkable combination of output power and efficiency. It is capable of delivering up to **+38 dBm (approximately 6 W) of saturated output power (PSAT)**. This high power level is crucial for overcoming path loss and ensuring strong signal integrity in mmWave systems, which are inherently susceptible to attenuation. Furthermore, the amplifier achieves a **power-added efficiency (PAE) of up to 25%**, a critical metric for reducing power consumption and thermal management challenges in densely packed electronic assemblies.
A key feature of the HMC787LC3BTR is its impressive **small-signal gain of 22 dB**, which minimizes the need for additional gain stages in a signal chain, thereby simplifying design and reducing both board space and overall system cost. The device is also designed for ease of integration. It requires a single positive supply of **+8 V** and incorporates an integrated bias sequencing circuit, which simplifies the power management design and protects the sensitive transistor from potentially damaging voltage transients during power-up and power-down cycles.
The amplifier is housed in a **5x5 mm, 32-pad ceramic land grid array (LGA)** package, which offers excellent thermal performance and is compatible with high-volume surface-mount technology (SMT) assembly processes. This makes it suitable for a wide array of demanding applications, including:
* **Point-to-point and point-to-multi-point radio links** for 5G backhaul.
* **SATCOM and VSAT terminals** operating in the Ka-band.
* **Military and aerospace radar and electronic warfare (EW) systems**.
* **Test and measurement equipment** requiring a robust stimulus signal.
**ICGOOODFIND**: The HMC787LC3BTR is a high-power, high-efficiency GaAs pHEMT MMIC amplifier that provides a critical solution for designers pushing the boundaries of performance in the 24 to 34 GHz frequency range. Its robust output power, excellent gain, and integrated features make it an ideal component for next-generation communication and sensor systems.
**Keywords**: **Millimeter-wave**, **GaAs pHEMT**, **Power Amplifier**, **Satcom**, **5G Infrastructure**.
