Infineon SPW17N80C3 Power MOSFET: High-Performance Features and Application Design Considerations
The Infineon SPW17N80C3 is a state-of-the-art N-channel Power MOSFET built on Infineon's proprietary CoolMOS™ C3 superjunction technology. This technology represents a significant leap forward in high-voltage power conversion, offering an optimal blend of high efficiency, robustness, and reliability. Designed primarily for switched-mode power supplies (SMPS), industrial drives, and power factor correction (PFC) stages, this 800V, 17A MOSFET is engineered to meet the demanding requirements of modern electronic systems.
A core highlight of the SPW17N80C3 is its exceptionally low effective dynamic output capacitance (Coss(eff)). This characteristic is crucial for achieving high switching frequencies with minimal switching losses, which directly translates to higher overall system efficiency. This makes the device particularly suitable for quasi-resonant and hard-switching topologies where turn-off losses are a primary concern.
Furthermore, the MOSFET boasts an ultra-low gate charge (Qg). A lower Qg reduces the driving requirements, allowing for the use of simpler, more cost-effective gate driver ICs. It also minimizes switching times and the associated losses during the turn-on and turn-off transitions. The combination of low Qg and low Coss(eff) ensures that the device operates with minimal switching losses, a key factor for high-frequency designs aiming for peak efficiency.
Another critical feature is its integrated fast body diode. This intrinsic diode provides excellent reverse recovery characteristics, which is vital for circuits like power factor correction (PFC) and half-bridge configurations where the body diode conducts. The diode's robust performance enhances the overall reliability of the application by mitigating stress during commutation events.
From a design perspective, several considerations are paramount when implementing the SPW17N80C3. First, effective thermal management is non-negotiable. Despite its high efficiency, managing power dissipation is critical. Designers must ensure a low thermal resistance path from the case (TO-247) to the heatsink using appropriate thermal interface materials. Proper PCB layout is equally important; minimizing parasitic inductance in the high-current switching loop is essential to suppress voltage spikes and prevent potential overvoltage stress on the device.
Secondly, gate drive optimization is key. While the low Qg simplifies driving, the gate driver must still be capable of sourcing and sinking sufficient peak current to ensure swift and crisp switching transitions. A gate resistor value must be carefully selected to balance between switching speed (losses) and controlling EMI generation. It is also recommended to use a negative voltage turn-off, if possible, in noisy environments to enhance noise immunity and prevent spurious turn-on.
Finally, designers must account for avalanche ruggedness. The SPW17N80C3 is characterized with 100% avalanche tested, ensuring it can withstand a certain level of unclamped inductive switching (UIS) events. This built-in ruggedness provides an additional safety margin in applications prone to voltage transients, such as motor drives or offline power supplies.
ICGOO
The Infineon SPW17N80C3 Power MOSFET leverages advanced CoolMOS™ C3 technology to deliver a high-efficiency, robust solution for demanding high-voltage applications. Its standout features, including ultra-low switching losses and an integrated fast body diode, make it an superior choice for designers aiming to push the boundaries of power density and performance in systems like server PSUs, industrial power supplies, and renewable energy inverters.
Keywords:
1. CoolMOS™ C3 Technology
2. Low Switching Losses
3. Fast Body Diode
4. Gate Charge (Qg)
5. Avalanche Ruggedness
