Infineon BSZ12DN20NS3G: 40V Dual N-Channel MOSFET in a PG-TSDSON-8 Package

The Infineon BSZ12DN20NS3G is a highly integrated dual N-channel MOSFET housed in an advanced PG-TSDSON-8 (Plastic Dual Small Outline No-Lead) package, engineered to deliver superior power density and efficiency for modern space-constrained applications. This device combines two optimized 40V MOSFETs in a single compact footprint, making it an ideal solution for a wide range of power management tasks.

A key feature of this component is its exceptionally low on-state resistance (RDS(on)), which is as low as 12 mΩ maximum at 10 V (VGS). This low resistance is crucial for minimizing conduction losses, leading to higher efficiency and reduced heat generation in applications such as DC-DC converters, motor control, and load switching. The dual-die configuration allows for the design of more compact and efficient synchronous buck converter topologies, where one MOSFET can be used as the control switch and the other as the synchronous rectifier.

The PG-TSDSON-8 package offers a superb thermal performance due to its exposed thermal pad, which facilitates efficient heat dissipation away from the silicon. This is paramount for maintaining device reliability under high-current conditions. Furthermore, the package's small size is instrumental in achieving higher power density on the PCB, a critical requirement for portable electronics, computing systems, and automotive applications.

Another significant advantage is the device's optimized gate charge (Qg), which ensures fast switching speeds. This characteristic reduces switching losses, a major contributor to inefficiency in high-frequency circuits. Designers can leverage this to increase the switching frequency of their power supplies, allowing for the use of smaller passive components like inductors and capacitors.

The BSZ12DN20NS3G is also characterized by its robustness and reliability, featuring a qualified avalanche ruggedness and a wide operating temperature range. This makes it a dependable choice for harsh environments, particularly in the automotive sector for systems like advanced driver-assistance systems (ADAS), infotainment, and powertrain modules.

ICGOODFIND: The Infineon BSZ12DN20NS3G stands out as a premier solution for designers seeking to maximize efficiency and power density. Its combination of low RDS(on), excellent thermal performance in a miniaturized package, and dual-N-channel integration makes it a powerful enabler for the next generation of compact and energy-efficient power electronics.

Keywords: Dual N-Channel MOSFET, Low RDS(on), PG-TSDSON-8 Package, Power Density, Synchronous Rectification.